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BFQ18A
NPN 4 GHz wideband transistor
Rev. 03 -- 28 September 2007 Product data sheet
IMPORTANT NOTICE
Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - (c) Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - (c) NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors
NXP Semiconductors
Product specification
NPN 4 GHz wideband transistor
DESCRIPTION NPN transistor in a plastic SOT89 envelope intended for application in thick and thin-film circuits. It is primarily intended for MATV purposes. PINNING PIN 1 2 3 DESCRIPTION Code: FF emitter collector base
3 2
BFQ18A
1
Fig.1 SOT89.
QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot fT Cre dim PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation transition frequency feedback capacitance intermodulation distortion up to Ts = 155 C (note 1) IC = 100 mA; VCE = 10 V; f = 500 MHz; Tj = 25 C IC = 0; VCE = 10 V; f = 10.7 MHz IC = 80 mA; VCE = 10 V; RL = 75 ; Vo = 700 mV; measured at f(p+q-r) = 793.25 MHz open base CONDITIONS open emitter TYP. MAX. UNIT - - - - 4 1.2 - 25 18 150 1 - - -60 V V mA W GHz pF dB
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature up to Ts = 155 C (note 1) open emitter open base open collector CONDITIONS MIN. - - - - - -65 - MAX. 25 18 2 150 1 150 175 UNIT V V V mA W C C
Rev. 03 - 28 September 2007
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NXP Semiconductors
Product specification
NPN 4 GHz wideband transistor
THERMAL RESISTANCE SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL hFE Cc Ce Cre fT dim Note 1. Ic = 80 mA; VCE = 10 V; RL = 75 ; Vp = Vo = 700 mV; fp =795.25 MHz; Vq = Vo -6 dB; fq = 803.25 MHz; Vr = Vo -6 dB; fr = 805.25 MHz; measured at f(p+q-r) = 793.25 MHz. PARAMETER DC current gain collector capacitance emitter capacitance feedback capacitance transition frequency intermodulation distortion (see Fig.2) CONDITIONS IC = 100 mA; VCE = 10 V IE = ie = 0; VCB = 10 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = 0; VCE = 10 V; f = 10.7 MHz IC = 100 mA; VCE = 10 V; f = 500 MHz note 1 MIN. 25 - - - - - PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 155 C (note 1)
BFQ18A
THERMAL RESISTANCE 20 K/W
TYP. - 2 11 1.2 4 -60
UNIT pF pF pF GHz dB
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NXP Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ18A
MBB361
handbook, halfpage handbook, halfpage
120
5 H 200 5 H 10 k L1 10 nF
1.5 nF VBB VCC 2.2 nF
h FE
80
10 nF
4.7 nF DUT 2.2 nF 0.68 pF 12 0 0 40 80 120 160 I C (mA) RL 40
0.68 pF
MBB829
f = 40 - 860 MHz.
VCE = 10 V; Tj = 25 C.
Fig.2 Intermodulation distortion MATV test circuit.
Fig.3
DC current gain as a function of collector current.
handbook, halfpage
8
MBB357
fT (GHz) 6
4
2
0 0 40 80 120 I C (mA) 160
VCE = 10 V; f = 500 MHz; Tj = 25 C.
Fig.4
Transition frequency as a function of collector current.
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NXP Semiconductors
Product specification
NPN 4 GHz wideband transistor
PACKAGE OUTLINE
BFQ18A
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads
SOT89
D
B
A
bp3
E
HE
Lp 1 2 bp2 wM B bp1 e1 e 3 c
0
2 scale
4 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.6 1.4 bp1 0.48 0.35 bp2 0.53 0.40 bp3 1.8 1.4 c 0.44 0.23 D 4.6 4.4 E 2.6 2.4 e 3.0 e1 1.5 HE 4.25 3.75 Lp 1.2 0.8 w 0.13
OUTLINE VERSION SOT89
REFERENCES IEC JEDEC TO-243 JEITA SC-62
EUROPEAN PROJECTION
ISSUE DATE 06-03-16 06-08-29
Rev. 03 - 28 September 2007
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NXP Semiconductors
BFQ18A
NPN 4 GHz wideband transistor
Legal information
Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
Contact information
For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com
Rev. 03 - 28 September 2007
6 of 7
NXP Semiconductors
BFQ18A
NPN 4 GHz wideband transistor
Revision history
Revision history Document ID BFQ18A_N_3 Modifications: BFQ18A_CNV_2 Release date 20070928 Data sheet status Product data sheet Product specification Change notice Supersedes BFQ18A_CNV_2 -
*
Fig. 1 and package outline updated
19950901
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 28 September 2007 Document identifier: BFQ18A_N_3

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